P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P Channel MOSFET

SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM

DESCRIPTION The ST95P04 is a 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The 4K bit memory is organised as 32 pages of 16 bytes. The memory is accessed by a simple SPI bus compatible serial interface. T

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.