| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■40V,90A,RDS(ON)=5.1mW@VGS=10V. RDS(ON)=7.8mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■40V,80A,RDS(ON)=5.1mΩ@VGS=10V. RDS(ON)=7.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 40V,85A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.4mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■40V,90A,RDS(ON)=5.1mW@VGS=10V. RDS(ON)=7.8mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.71893 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2105+ |
TO-263 |
12000 |
原装正品 |
|||
CET |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
CET |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
VB |
2019 |
T0-263 |
55000 |
绝对原装正品假一罚十! |
|||
CET/華瑞 |
21+ROHS |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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