N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel MOSFET uses advanced trench technology

文件：1.45549 Mbytes Page：5 Pages

N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 85A, RDS(ON) = 4.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.4 mW @VGS = 4.5V.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 90A, RDS(ON) = 5.1mW @VGS = 10V. RDS(ON) = 7.8mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 85A, RDS(ON) = 4.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.4 mW @VGS = 4.5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 90A, RDS(ON) = 5.1mW @VGS = 10V. RDS(ON) = 7.8mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel MOSFET uses advanced trench technology

文件：1.71893 Mbytes Page：5 Pages