N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 19mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

Toggle switches

文件：506.4 Kbytes Page：3 Pages

Capacity (20-hour) 280Ah

文件：258.29 Kbytes Page：1 Pages