N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 6.4A, RDS(ON) = 0.45W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N-Channel MOSFET uses advanced trench technology

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N Channel MOSFET

PISTON SEALS

DESCRIPTION The BECA 655 profile is a double acting composite piston seal composed of a flexible rubber ring and a polyamide friction ring with a step cut. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

Panel Mounted Digital Timer

• Direct Replacement For Electromechanical Timers • Two Timing Modes • Data Retention with EEPROM Memory or Battery (included with timer). • Five Time Ranges • Simple Keypad Time Setting • Sealed Faceplate • Keypad Lockout of Time Setting • Easy Programming • Instantaneous Contacts Directl

MINIATURE FUSEHOLDERS

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Premier Supplier of Electronic Hardware

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600H and 600NH series

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