N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,6.4A,RDS(ON)=0.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,6.4A,RDS(ON)=0.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

N-ChannelMOSFETusesadvancedtrenchtechnology

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PISTONSEALS

DESCRIPTION TheBECA655profileisadoubleacting compositepistonsealcomposedof aflexiblerubberringandapolyamide frictionringwithastepcut. APPLICATIONS Agriculture Mobilemachinery Hydrauliccylinders

PanelMountedDigitalTimer

•DirectReplacementForElectromechanicalTimers •TwoTimingModes •DataRetentionwithEEPROMMemoryorBattery(includedwithtimer). •FiveTimeRanges •SimpleKeypadTimeSetting •SealedFaceplate •KeypadLockoutofTimeSetting •EasyProgramming •InstantaneousContactsDirectl

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