N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 20.7A, RDS(ON) = 45mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 52mW @VGS = 4.5V.

N Channel MOSFET

SOT23, Low-Power 關P Supervisory Circuits with Battery Backup

General Description The MAX6361–MAX6364 supervisory circuits reduce the complexity and number of components required for power-supply monitoring and battery control functions in microprocessor (µP) systems. The circuits significantly improve system reliability and accuracy compared to that obta

SOT23, Low-Power 關P Supervisory Circuits with Battery Backup

General Description The MAX6361–MAX6364 supervisory circuits reduce the complexity and number of components required for power-supply monitoring and battery control functions in microprocessor (µP) systems. The circuits significantly improve system reliability and accuracy compared to that obta

Silicon Power Rectifier Diode, 300 Amp

Features: ● Diffused Diode ● High Voltage Ratings up to 1600 Volts ● High Surge Current Capabilities ● Available in Anode–to–Case or Cathode–to–Case Style

QUARTZ CRYSTAL OSCILLATOR?

文件：149.35 Kbytes Page：4 Pages

QUARTZ CRYSTAL OSCILLATOR?

文件：149.35 Kbytes Page：4 Pages