N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 48A, RDS(ON) = 24mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 29mW @VGS = 5V.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

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Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages