N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=130A,RDS(ON)

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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Extra Large Alligator Clip With 4mm Sheath Safety Jack

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Component1 12 X 1 PAIR

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Silicon Monolithic Integrated Circuit

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OPERATION INSTRUCTION

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