N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

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