N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 25A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 25A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

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