P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS(ON) = 28mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -40A, RDS(ON) = 23mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 28mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

5000 WATTS (AC) DC/D CSINGLE OUTPUT

5000 WATTS (AC) DC/DC SINGLE OUTPUT

7V 600mA 75dB High PSRR, High Speed LDO

文件：255.9 Kbytes Page：4 Pages

7V 600mA 75dB High PSRR, High Speed LDO

文件：255.9 Kbytes Page：4 Pages

Single-Channel, 1024-Position, Digital Rheostat with I2C Interface and 50-TP Memory

文件：1.033619 Mbytes Page：20 Pages

RF AMPLIFIER MODEL

文件：73.67 Kbytes Page：1 Pages