N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

PinSens Force Sensor for mold cavity pressure with diameter 12,6 mm

Miniature Force Sensor for Mold Cavity Pressure with diameter 6 mm and M2,5 thread

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 22 (19/34) AWG Tinned Copper 0.032 b) Insulation 0.025 Wall, Nom. Polyethylene(PE) 0.082 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 2 BLACK 2) Cable Assembly 2 Components Cabled a) Twists: 5.3 Twists/foot (min)

CAPTIVE PANEL SCREWS

文件：395.93 Kbytes Page：1 Pages

3M??Novec??1710 Electronic Grade Coating

文件：119.62 Kbytes Page：4 Pages