位置：首页 > IC中文资料第10696页 > CEU12N10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU12N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
CEU12N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
CEU12N10 | N-Channel 100 V (D-S) MOSFET 文件：1.01053 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
CEU12N10 | N-Channel Enhancement Mode Field Effect Transistor 文件：416.48 Kbytes Page：4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 185mW @VGS = 5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel 100 V (D-S) MOSFET APPLICATIONS • Primary Side Switch | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
N-Channel 100 V (D-S) MOSFET 文件：443.06 Kbytes Page：5 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
N-Channel 100 V (D-S) MOSFET 文件：1.68514 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
12A, 100V N-CHANNEL POWER MOSFET 文件：194.56 Kbytes Page：5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
N-Channel 100 V (D-S) MOSFET 文件：1.00844 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
CEU12N10产品属性
- 类型
描述
- 型号
CEU12N10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO252 |
15000 |
全新原装现货,价格优势 |
|||
CET/華瑞 |
24+ |
SOT-223 |
9600 |
原装现货,优势供应,支持实单! |
|||
CET/華瑞 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET/華瑞 |
24+ |
TO-252 |
499550 |
免费送样原盒原包现货一手渠道联系 |
|||
CET |
TO-252 |
69520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET-MOS |
24+ |
con |
100 |
现货常备产品原装可到京北通宇商城查价格 |
|||
CET |
23+ |
TO-252 |
7300 |
专注配单,只做原装进口现货 |
|||
CET |
23+ |
TO-252 |
7300 |
专注配单,只做原装进口现货 |
|||
CEN |
23+ |
SOT252 |
7000 |
||||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
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CEU12N10规格书下载地址
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DdatasheetPDF页码索引
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