N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 3.4A, RDS(ON) = 2.9 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches

Description The A1185 and A1186 are ultrasensitive, two-wire, unipolar Hall effect switches. The operate point, BOP, can be field programmed, after final packaging of the sensor and placement into the application. This advanced feature allows the optimization of the sensor switching performance

Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches

Features and Benefits ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Field programmable for optimized switchpoints ▪ On-chip protection ▫ Supply transient protection ▫ Reverse-battery protection ▫ On-board voltage regulator

Single Chip Low Cost Low Power RF-Transmitter

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Massive Arcade Button with LED - 100mm Red

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High Sensitivity Hall Effect Latch

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