N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

Power MOSFET

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