P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.3A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead free product is acquired.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.4A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. RoHS compliant.

P Channel MOSFET

Comfort Probe with Removable 4mm Banana Plug Adapter

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1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

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750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

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750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

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Low Noise JFET Amplifiers

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