N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. RDS(ON)=580mΩ@VGS=6V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-223package.

PLLModule

Description TheplerowTMPLLsynthesizermodulewasdesignedforuseinwirelessandwirelinesystemsinawiderangeoffrequencyfrom50MHzto6GHz.ASBísPLLprovidesexceptionallylowspuriousandphasenoiseperformancewithfastlockingtimeandlowcurrentconsumption.Allproductsare

MechanicalCamSwitches

BNS819-B08-R08-46-13 Basicfeatures Approval/ConformityCE UKCA CCC WEEE BasicstandardIEC60947-5-1 Operatingprinciple1-8.Switchposition:Mechanical VersionSnapcontact

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,2A,RDS(ON)=440mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CuAlloyBareFerrule,SmoothFunnelEntry,2AWG,0.59L,Seamlessbbl,TinPlated,ForUseOnCuCond.

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