P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

ReadoutModuleswithPeak-HoldFeature

FEATURES •ForusewithVishayMeasurementsGroup2300SignalConditioningAmplifierSystem •Providesreal-timedigitalreadoutwithpeak-holdcapability •Bothmaximumandminimumsignalsaresortedindependently •Front-paneljacksareprovidedforutilityinputssuchasthebridge

NylonHoseClamps

文件：116.22 Kbytes Page：1 Pages

NylonHoseClamps

文件：116.22 Kbytes Page：1 Pages

REMOVEDLEADFREENOTEADDEDRoHS

文件：298.79 Kbytes Page：1 Pages

ALLDIMENSIONSAREINMILLIMETERS

文件：356.54 Kbytes Page：1 Pages