P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.2A, RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead free product is acquired. RDS(ON) = 78mW @VGS = -1.8V.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.3A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

P Channel MOSFET

Readout Modules with Peak-Hold Feature

FEATURES • For use with Vishay Measurements Group 2300 Signal Conditioning Amplifier System • Provides real-time digital readout with peak-hold capability • Both maximum and minimum signals are sorted independently • Front-panel jacks are provided for utility inputs such as the bridge

Nylon Hose Clamps

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Nylon Hose Clamps

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ALL DIMENSIONS ARE IN MILLIMETERS

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REMOVED LEAD FREE NOTE ADDED RoHS

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