P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 62mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead free product is acquired.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 75mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.9A, RDS(ON) = 52mW @VGS = -4.5V. RDS(ON) = 72mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

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P Channel MOSFET

P Channel MOSFET

Channel style heat sink with folded back fins

Channel style heat sink with folded back fins for increased cooling surface area. Available with tin plated solderable tabs for easy attachment to the printed circuit card.

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