N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

P-Channel Enhancement Mode Field Effect Transistor

30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant. RDS(ON) = 120mW @VGS = -2.5V.

N Channel MOSFET

N Channel MOSFET

N Channel MOSFET

ROD SEALS

DESCRIPTION The BECA 231 profile is a U-ring type single acting rod seal with offset polyurethane lips. It can be assembled in a groove according to standard ISO 5597. APPLICATIONS Mobile hydraulics Injection presses Machine tools Presses Hydraulic cylinders

MINIATURE FUSES - 6.3x32 mm

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6.3x32 mm MINIATURE FUSES

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Direct replacement for BA15s

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3M??High Performance Masking Tape 231/231A

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