N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.4A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 36mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). RoHS compliant. SOT-23 package. Rugged and reliable. ESD Protected 2KV.

N Channel MOSFET

3.3 VOLT ZERO DELAY CLOCK MULTIPLIER

Features • Phase-Lock Loop Clock Distribution for Applications ranging from 10MHz to 133MHz operating frequency • Distributes one clock input to two banks of four outputs • Separate output enable for each output bank • External feedback (FBK) pin is used to synchronize the outputs to the clo

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