N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.4A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 36mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). RoHS compliant. SOT-23 package. Rugged and reliable. ESD Protected 2KV.

N Channel MOSFET

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

Headphone Driver IC

DESCRIPTION PT2308 is a Class AB stereo headphone driver chip utilizing CMOS Technology specially designed for portable digital audio applications. It is housed in an 8-pin DIP or SOP package and is functionally compatible with TDA1308. Pin assignments and application circuit are optimized for

Headphone Driver

DESCRIPTION PT2308L is a Class AB stereo headphone driver chip utilizing CMOS Technology specially designed for portable digital audio applications. It is housed in an 8-pin DIP or SOP package and is functionally compatible with TDA1308. Pin assignments and application circuit are optimized for

Headphone Driver

DESCRIPTION PT2308L is a Class AB stereo headphone driver chip utilizing CMOS Technology specially designed for portable digital audio applications. It is housed in an 8-pin DIP or SOP package and is functionally compatible with TDA1308. Pin assignments and application circuit are optimized for

Headphone Driver IC

DESCRIPTION PT2308 is a Class AB stereo headphone driver chip utilizing CMOS Technology specially designed for portable digital audio applications. It is housed in an 8-pin DIP or SOP package and is functionally compatible with TDA1308. Pin assignments and application circuit are optimized for