P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.4A, RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 108mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

P Channel MOSFET

7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

3M??Masking Tape 2307

文件：131.009 Kbytes Page：5 Pages

Pneumatic muffler

文件：101.63 Kbytes Page：1 Pages

Nylon Hose Clamps

文件：116.22 Kbytes Page：1 Pages