P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ SOT-23 package. ■ Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.2A, RDS(ON) = 78mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant.

P Channel MOSFET

7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

3M??Masking Tape 2307

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Pneumatic muffler

文件：101.63 Kbytes Page：1 Pages

Nylon Hose Clamps

文件：116.22 Kbytes Page：1 Pages