N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

N Channel MOSFET

Lowpass Filter

Specifications Filter Type Lowpass Insertion Loss 40 dB Source and Load Impedance 75 Ω

SOT-23 Plastic-Encapsulate MOSFETS

N-Channel MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

3.5A竊?30V N-CHANNEL MOSFET

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