P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(ON) = 230mΩ (typ) @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

P Channel MOSFET

DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Switching Times with Inductive Loads: tf =

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages