N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.4A, RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

N Channel MOSFET

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

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P-CHANNEL MOSFET N-CHANNEL MOSFET

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20V N-Channel Enhancement MOS FET

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Nylon Hose Clamps

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