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位置：首页 > IC中文资料第4960页 > CES

CES价格

参考价格：￥7.2189

型号：CES-0402MC 品牌：Copal 备注：这里有CES多少钱，2025年最近7天走势，今日出价，今日竞价，CES批发/采购报价，CES行情走势销售排行榜，CES报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CES

SLIDE SWITCHES

文件：880.17 Kbytes Page：4 Pages

COPALCopal Electronics

尼得科科智博电子尼得科科智博电子(上海)有限公司

COPAL
CES-20134-088PM

SPEAKER

FEATURES •0.8Wpowerrating •dustproofmesh •60mmleadwire •2panelmountflanges •wireleadswithconnectoroptions

CUID

CUI Devices

CUID
CES-20134-088PMA

SPEAKER

FEATURES •0.8Wpowerrating •dustproofmesh •60mmleadwire •2panelmountflanges •wireleadswithconnectoroptions

CUID

CUI Devices

CUID
CES-20134-088PMB

SPEAKER

FEATURES •0.8Wpowerrating •dustproofmesh •60mmleadwire •2panelmountflanges •wireleadswithconnectoroptions

CUID

CUI Devices

CUID
CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-2.8A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=150mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2301

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-2.8A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2301A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2302

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2302

N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2302A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2303

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-1.9A,RDS(ON)=150mΩ(typ)@VGS=-10V. RDS(ON)=230mΩ(typ)@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-4A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=70mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2305A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2306

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,3.6A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. RDS(ON)=100mΩ@VGS=1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2306A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2307

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2307

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2307A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2307A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2307B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2307BB

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.4A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=108mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,5.4A,RDS(ON)=27mΩ@VGS=4.5V. RDS(ON)=36mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,5.4A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=36mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). RoHScompliant. SOT-23package. Ruggedandreliable. ESDProtected2KV.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2309

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-2.2A,RDS(ON)=165mΩ@VGS=-4.5V. RDS(ON)=300mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2310

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2310L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2312

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2312

N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES-231210-18PM

SPEAKER

FEATURES •8ohmratedimpedance •1.0Wratedpower •panelmount

CUID

CUI Devices

CUID
CES2313

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2313A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=86mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2314

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4A,RDS(ON)=50mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2314

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2315

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2316

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2317

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2317

P-Channel Enhancement Mode Field Effect Transistor

30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant. RDS(ON)=120mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2320

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,5.2A,RDS(ON)=29mΩ(typ)@VGS=10V. RDS(ON)=45mΩ(typ)@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2321

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=80mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2321

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2321

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2321B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2323

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-4.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2324

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,4.2A,RDS(ON)=45mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2324

N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2331

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2331

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2331

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2331A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES2336

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,1.8A,RDS(ON)=250mΩ@VGS=10V. RDS(ON)=330mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2342

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,4.2A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=58mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,3A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CES2362

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CES2363

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-2.5A,RDS(ON)=125mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CES-26138-16L030

SPEAKER

FEATURES •1.2Wratedpower •6ohmratedimpedance •30mmleadwire

CUID

CUI Devices

CUID
CES-2704-088L050

SPEAKER

FEATURES •0.8Wratedpower •lowprofile •50mmleadwire •wireleadswithconnectoroptions

CUID

CUI Devices

CUID

CES产品属性

  • 类型

    描述

  • 型号

    CES

  • 制造商

    SIIG

  • 功能描述

    7.1 Channel USB Audio Sound Card

  • 制造商

    SIIG

  • 功能描述

    USB 7.1 SOUNDCARD BLACK

CES供应商更多...

更新时间：2025-7-27 17:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
CESD5V0D1
CJ/长电
24+
SOD123
33500
全新进口原装现货,假一罚十
询价
深圳市汇莱威科技有限公司
CESDLC5V0M5
CJ/长电
24+
SOT-563
499735
免费送样原盒原包现货一手渠道联系
询价
深圳市明嘉莱科技有限公司
CESD5V0D3
海德
25+
SOD323
918000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
CES520
TOSHIBA(东芝)
24+
N/A
9548
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市坤融电子科技有限公司
CES40836MDCB000RB2
MURATA/村田
24+
SMD
2500
只做原厂渠道 可追溯货源
询价
标准国际(香港)有限公司
CES301G88DCB000RB2
MURATA
625
全新原装!优势库存热卖中!
询价
深圳兆威电子有限公司
CESDBLC5V0D3
23+
6000
只做原装 ！全系列供应可长期供货稳定价格优势！
询价
深圳市金华微盛电子有限公司
CESDLC5V0J4
SEMITEH
19+
SOT-353
30000
询价
深圳市赛特兴科技有限公司
CES520
TOSHIBA
23+
SOD-523
96
原装现货 挂了就有
询价
深圳诚思涵科技有限公司
CESDLC5V0K5
长电
16+
SOT-363
11560
进口原装现货/价格优势!
询价

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