DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■60V,5.6A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■-60V,-3.3A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=180mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

IECApplianceInletC14/C18,Screw-onmounting,Frontside,Quick-connect

Description -Panelmount: Screw-onmounting,FrontSide -ApplianceInlet,Pintemperature70°C,protectionclassIorII -Availableinblackandwhite

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AWideLineupof248nm,365nmand436nmType TheC6080seriesisacompactUVpowermeterspecificallydesignedtomeasuretheintensityofUVradiationemittedfromthelightguideoutputendofaUVspotlightsource.TheC6080usesaUVsensorthatexhibitsstablesensitivityevenafter

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■60V,5.6A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■-60V,-3.3A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=180mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

N-ChannelTrenchPowerMOSFET

文件：645.11 Kbytes Page：7 Pages

N-ChannelTrenchPowerMOSFET

文件：650.48 Kbytes Page：7 Pages