位置：首页 > IC中文资料第5654页 > CEP85N75
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP85N75 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package & TO-220F full-pak for through hole. | CET 华瑞 |   | |
CEP85N75 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | | |
CEP85N75 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 75V, 85A, RDS(ON) = 12mW @VGS = 12V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 13mW @VGS = 10V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 75V, 85A, RDS(ON) = 12mW @VGS = 12V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 13mW @VGS = 10V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET-MOS 华瑞 | |
CEP85N75产品属性
- 类型
描述
- 型号
CEP85N75
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
778 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
CET/華瑞 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
CET |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
25+ |
TO220 |
156720 |
明嘉莱只做原装正品现货 |
|||
TDK |
24+ |
N/A |
6618 |
公司现货库存,支持实单 |
|||
CET/华瑞 |
TO-220 |
8300 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET/華瑞 |
24+ |
TO220 |
200000 |
优质供应商,支持样品配送。原装诚信 |
|||
CET/華瑞 |
23+ |
TO220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
24+ |
TO220 |
11000 |
原装正品 有挂有货 假一赔十 |
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