型号 功能描述 生产厂家 企业 LOGO 操作
CEP83A3G

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 102A, RDS(ON) = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■

CET

华瑞

CEP83A3G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 102A, RDS(ON) = 4.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 6.2 mW @VGS = 4.5V. RoHS compliant.

CET-MOS

华瑞

CEP83A3G

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 100A, RDS(ON) = 5.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 8.0mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 102A, RDS(ON) = 4.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 6.2 mW @VGS = 4.5V. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 80A, RDS(ON) = 6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

CEP83A3G产品属性

  • 类型

    描述

  • 型号

    CEP83A3G

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2025-10-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
CET
25+
TO-220
2000
原装正品,假一罚十!
CET
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
25+
TO-220
156786
明嘉莱只做原装正品现货
CET
TO-220
50000
一级代理 原装正品假一罚十价格优势长期供货
TI
24+
63-SMD
6618
公司现货库存,支持实单
-
23+
NA
33183
原厂授权一级代理,专业海外优势订货,价格优势、品种
VBsemi
23+
TO220
10065
原装正品,有挂有货,假一赔十
SR
23+
TO-220
5000
原装正品,假一罚十
CET
23+
TO-220
8560
受权代理!全新原装现货特价热卖!

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