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型号 功能描述 生产厂家 企业 LOGO 操作
CEP83A3

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET

华瑞

CEP83A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 100A, RDS(ON) = 5.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 8.0mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

CEP83A3

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 102A, RDS(ON) = 4.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 6.2 mW @VGS = 4.5V. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 102A, RDS(ON) = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 80 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

CHENMKO

力勤

CEP83A3产品属性

  • 类型

    描述

  • BVDSS(V):

    30

  • Rds(on)mΩ@10V:

    5.3

  • Rds(on)mΩ@4.5V:

    8

  • ID(A):

    100

  • Qg(nC)@4.5V(typ):

    53

  • RθJC(℃/W):

    1.5

  • Pd(W):

    100

  • Configuration:

    Single

  • Polarity:

    N

更新时间:2026-7-23 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
24+
TO-220
87000
郑重承诺只做原装进口现货
CET
专业铁帽
TO-220
18
原装铁帽专营,代理渠道量大可订货
CET/華瑞
2022+
TO-220
2000
原厂代理 终端免费提供样品
25+
66880
原装正品,欢迎询价
CET
26+
TO-220
38754
原装正品渠道商 提供BOM一站式配单服务
CET
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
CET/華瑞
23+
TO-220
50000
全新原装正品现货,支持订货
恩XP
26+
TO-220
50000
芯为深仓现货
CET/華瑞
新年份
TO-220
69520
一级代理原装正品现货,支持实单!
CET/華瑞
23+
TO220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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