N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 14mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 14mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

LED SPACER MOUNTS

UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-13/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps, resistors, transis

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

Male Pins

文件：160.09 Kbytes Page：1 Pages

Terminal Device

文件：381.4 Kbytes Page：1 Pages

7060X and 7260X Series 10/25/40/50/100G Data Center Switches

文件：4.78761 Mbytes Page：11 Pages