N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

30V,65A,RDS(ON)=8mΩ@VGS=10V. RDS(ON)=12mΩ@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON) Highpowerandcurrenthandingcapability. TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ​​​​​​​●TO-220&TO-263package.

N-ChannelEnhancementModeFieldEffectTransistor

文件：382.5 Kbytes Page：4 Pages

PHENOLICINSTRUMENTCASES

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

Capacity(20-hour)280Ah

文件：258.29 Kbytes Page：1 Pages

E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices

文件：4.89948 Mbytes Page：122 Pages

E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices

文件：4.89948 Mbytes Page：122 Pages

HARTMANPowerSwitchingDCContactors

文件：1.0731 Mbytes Page：5 Pages