N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 57V, 56A ,RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N Channel MOSFET

2/2 or 3/2 way Pneumatic-Rocker-Solenoid Valve

The direct-acting rocker solenoid valve type 6106 is designed for use on neutral gaseous mediums. The heat input in the medium is minimal, because the housing is separated from the coil by a stainless steel plate. The valves can be mounted directly or also single or manifold mounted. They are u

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

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PRODUCT DESCRIPTION The AWT6106 is a 3.5 V (3.0 V to 4.2 V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, a

DMM RF Detector Test Probe

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THE BREADBOARDING MEDIUM FOR SURFACE MOUNT

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