N-Channel Enhancement Mode Field Effect Transistor

URES ■ 100V, 60A, RDS(ON) = 23.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

60A,100V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 57A, RDS(ON) = 24mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N Channel MOSFET

N-Channel MOSFET uses advanced trench technology

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Fast Switching Speed

文件：60.63 Kbytes Page：2 Pages

60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.31 Kbytes Page：10 Pages

60A 100V N-channel Enhancement Mode Power MOSFET

文件：719.21 Kbytes Page：10 Pages

60A 100V N-channel Enhancement Mode Power MOSFET

文件：713.52 Kbytes Page：10 Pages

60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.67 Kbytes Page：10 Pages