N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 118A, RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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Extra Large Alligator Clip With 4mm Sheath Safety Jack

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Component1 12 X 1 PAIR

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Silicon Monolithic Integrated Circuit

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OPERATION INSTRUCTION

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