N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

N-ChannelMOSFETusesadvancedtrenchtechnology

文件：1.10074 Mbytes Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V.

BROADBAND:RF&WIRELESS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

Component16X1PAIR

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6SP22SOLIDTCPVC/PVCComputerCable

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