N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

N-Channel MOSFET uses advanced trench technology

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N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 144A, RDS(ON) = 4.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

N Channel MOSFET

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

DIPLEXERS FOR CABLE MODEMS, SET TOP BOXES AND GATEWAYS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

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6SP 22 SOLID TC PVC/PVC Computer Cable

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