N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES

FEATURES • ZENER VOLTAGE 12.4V to 200V • TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

HIGH VOLTAGE DIODES

FEATURES • ZENER VOLTAGE 12.4V to 200V • TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES 5

• 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005/°C AND 0.002/°C • HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE

Hex inverter

DESCRIPTION The HEF4069UB is a general purpose hex inverter. Each of the six inverters is a single stage.

Shorty Snap Rivets

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