N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

HIGHVOLTAGETEMPERATURECOMPENSATEDZENERDIODES

FEATURES •ZENERVOLTAGE12.4Vto200V •TEMPERATURECOEFFICIENTRANGE:0.005/°Cto0.002/°C

HIGHVOLTAGEDIODES

FEATURES •ZENERVOLTAGE12.4Vto200V •TEMPERATURECOEFFICIENTRANGE:0.005/°Cto0.002/°C

12.4THRU200VOLTNOMINALZENERVOLTAGES5

•12.4THRU200VOLTNOMINALZENERVOLTAGES+5 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •EFFECTIVETEMPERATURECOEFFICIENTSOF0.005/°CAND0.002/°C •HERMETICALLYSEALED,METALLURGICALLYBONDED,DOUBLEPLUGSUBASSEMBLIESENCAPSULATEDINAPLASTICCASE

HexInverter

TheMC14069UBhexinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Theseinvertersfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Eachofthesixinvertersisasinglestagetominimizepropagat

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.