位置：首页 > IC中文资料第8603页 > CEP4060
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mW @VGS = 10V. RDS(ON) = 90mW @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 17A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES • 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V. • Super high dense cell design for extremely low RDS(ON) • High power and current handling capability. • TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 15A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：405.41 Kbytes Page：4 Pages | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：87.08 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：406.85 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | |
CEP4060产品属性
- 类型
描述
- 型号
CEP4060
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2026+ |
TO-220 |
5027 |
原装正品,假一罚十! |
|||
CET |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
CET/華瑞 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
2023+ |
TO-220 |
50000 |
原装现货 |
|||
CET华瑞 |
20+ |
TO-220 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
26+ |
VQFN-16 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
4000 |
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CEP4060规格书下载地址
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DdatasheetPDF页码索引
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