N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package

N Channel MOSFET

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temper

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

0.3??Single Digit Numeric Display, Seven Segment, Common Cathode

Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) height single digit, seven segment, common cathode displays. The NTE3056 and NTE3057 utilize LED chips which are made from GaAsP on a GaAs substrate. The NTE3059 utilizes LED chips which are made from GaP on a transparent GaP substrat

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 60 Volts CURRENT - 30.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forward voltage, high current capability • High surge capacity.