N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23-T package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 0.25A, RDS(ON) = 3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead free product is acquired. RDS(ON) = 4 W @VGS = 4.5V.

N Channel MOSFET

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

C-band Crossbar/Fan-Out

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Male Pins

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toggle switches

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