Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

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RS232, #22-3c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 22 AWG stranded (7x30) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

Cat 5e UTP Patch Cable

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