P-Channel Enhancement Mode MOSFET

FEATURES ● -20V, -5.8A, RDS(ON) = 50mΩ @VGS = -10V. -2A, RDS(ON) = 90mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

P-Channel Enhancement Mode MOSFET

Electronic, 7 C #22 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 7 Conductor 22AWG (7x30) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

SpaceMaker™, 7 C #22 Str TC, PO Ins, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 7 Conductor 22AWG (19x34) Tinned Copper, PO Insulation, PVC Outer Jacket, AWM 2937

MACHINE SCREW PAN PHILLIPS 10-32

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LTE Band 7 MIPI ET PA 2.0 mm 횞 2.5 mm Power Amplifier Module

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Power Amplifier Module

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