N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,7A,RDS(ON)=30mΩ@VGS=10V.RDS(ON)=50mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,7.3A,RDS(ON)=28mΩ@VGS=10V.RDS(ON)=42mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

HighPerformInstr,1Pr#16StrTC,PVCInsE2,PVCJkt,PLTC

ProductDescription HighPerformanceInstrumentation,1Pair16AWG(19x29)TinnedCopper,PVCInsulationE2ColorCode,PVCOuterJacket,PLTC

SingleN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesareparticularlysuitedforlow

MACHINESCREWPANPHILLIPS10-32

文件：130.87 Kbytes Page：1 Pages

N-Channel20V(D-S)MOSFET

文件：1.0163 Mbytes Page：9 Pages

6-32BINDINGHEADSCREW

文件：248.52 Kbytes Page：1 Pages