N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N Channel MOSFET

Apollo MxFE Octal, 16-Bit, 16 GSPS RF DAC and Octal, 12-Bit, 8 GSPS RF ADC

FEATURES ► Flexible reconfigurable common platform design ► 8 DACs and 8 ADCs (8D8A) ► Usable RF analog bandwidth to 16 GHz ► Maximum DAC/ADC sample rate up to 16 GSPS/8 GSPS ► DAC to ADC sample rate ratios of 1 and 2 ► Clocking ► On-chip PLL (7 GHz to 14 GHz VCO) ► External RFCLK input up

Apollo MxFE Quad, 16-Bit, 28 GSPS RF DAC and Quad, 12-Bit, 20 GSPS RF ADC

FEATURES ► Flexible reconfigurable common platform design ► 4 DACs and 4 ADCs (4D4A) ► Usable RF Analog bandwidth up to 18 GHz ► Maximum DAC/ADC sample rate up to 28 GSPS/20 GSPS ► DAC to ADC sample rate ratios of 1 and 2 ► Clocking ► On-chip PLL (7 GHz to 14 GHz) ► External RFCLK input up

Releasable Type T Rivets

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High Performance Double Coated Tapes with Adhesive 375

文件：17.12 Kbytes Page：3 Pages

High Performance Double Coated Tapes with Adhesive 375

文件：17.12 Kbytes Page：3 Pages