Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

T- Subminiature Lamps

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

FIBRE CHANNEL Dual Transformer

FIBRE CHANNEL Dual Transformer • Designed for use with 75Ω Coaxial or 150Ω STP Cable • Fast rise time and low baseline wander

Miniature Rocker Lever Handle Switches

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7000 SERIES/HIGH RELIABILITY REED RELAYS

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