N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,3.6A,RDS(ON)=105mW@VGS=10V. RDS(ON)=130mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CustomerSpecificationS

AlthoughAlphaWire(“Alpha”)makeseveryreasonableefforttoensurethereaccuracyatthetimeofpublication, informationandspecificationsdescribedhereinaresubjecttoerrorsoromissionsandtochangeswithoutnotice,and thelistingofsuchinformationandspecificationsdoesnotensur

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor24(7/32)AWGBareCopper0.024 b)Insulation 0.008Wall,Nom.Modified PolyphenyleneEther 0.040+/-0.002 (1)Color(s) WHITE,BLACK,RED,GREEN,YELLOW,BLUE,BROWN ORANGE,GREEN/YELLOW

Single/DualisoSPITransceiver

GENERALDESCRIPTION TheADBMS68211(single)andADBMS68221(dual)providebidirectional isolatedserialportinterface(isoSPI™)communications betweentwoisolateddevicesthroughasingletwistedpairconnection foreachdatalink.Eachtransceiverencodeslogicstatesinto signalsthatare

Quickexhaustvalve

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CustomerSpecification

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