N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 3.6A, RDS(ON) = 105mW @VGS = 10V. RDS(ON) = 130mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N Channel MOSFET

Customer SpecificationS

Although Alpha Wire (“Alpha”) makes every reasonable effort to ensure there accuracy at the time of publication, information and specifications described herein are subject to errors or omissions and to changes without notice, and the listing of such information and specifications does not ensur

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 24 (7/32) AWG Bare Copper 0.024 b) Insulation 0.008 Wall, Nom. Modified Polyphenylene Ether 0.040+/- 0.002 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GREEN/YELLOW

Single/Dual isoSPI Transceiver

GENERAL DESCRIPTION The ADBMS68211 (single) and ADBMS68221 (dual) provide bidirectional isolated serial port interface (isoSPI™) communications between two isolated devices through a single twisted pair connection for each data link. Each transceiver encodes logic states into signals that are

Quick exhaust valve

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Customer Specification

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