DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■60V,4.1A,RDS(ON)=68mΩ@VGS=10V. RDS(ON)=86mΩ@VGS=4.5V. ■-60V,-3.1A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=170mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

N-andP-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •CCFLInverter

DualEnhancementModeFieldEffectTransistor(NandPChannel)

60V,4.1A,RDS(ON)=68mW@VGS=10V. FEATURES RDS(ON)=86mW@VGS=4.5V. -60V,-3.1A,RDS(ON)=130mW@VGS=-10V. RDS(ON)=170mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

N-ChanelandP-ChannelMOSFETuseadvancedtrenchtechnology

文件：761.06 Kbytes Page：8 Pages

DualIFReceiver

GENERALDESCRIPTION TheAD6659isamixed-signal,dual-channelIFreceiversupportingradiotopologiesrequiringtworeceiversignalpaths,suchasinmain/diversityordirectconversion.Thiscommunicationssystemsprocessorconsistsoftwohighperformanceanalog-todigitalconverters(ADCs)and

RFAMPLIFIERMODEL

文件：87.88 Kbytes Page：1 Pages

RFAMPLIFIERMODEL

文件：90.59 Kbytes Page：1 Pages