Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. ■ -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

N- and P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 4.1A, RDS(ON) = 68mW @VGS = 10V. FEATURES RDS(ON) = 86mW @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N+P Power MOSFET

N-Chanel and P-Channel MOSFET use advanced trench technology

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Dual IF Receiver

GENERAL DESCRIPTION The AD6659 is a mixed-signal, dual-channel IF receiver supporting radio topologies requiring two receiver signal paths, such as in main/diversity or direct conversion. This communications systems processor consists of two high performance analog-todigital converters (ADCs) and

RF AMPLIFIER MODEL

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RF AMPLIFIER MODEL

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