Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.8A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual P-Channel Enhancement Mode Field Effect Transistor

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DC MOTOR FORWARD / REVERSE DUAL SPEED ELECTRONIC GOVEMOR

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