P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P-Channel Enhancement Mode MOSFET

‘GENERAL FEATURES * Vos=-60V b =-4A * Roson

P-Channel Enhancement Mode Field Effect Transistor

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P Channel MOSFET

Comfort Probe with Removable 4mm Banana Plug Adapter

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1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：834.01 Kbytes Page：32 Pages

750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：640.11 Kbytes Page：24 Pages

750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：640.11 Kbytes Page：24 Pages

Low Noise JFET Amplifiers

文件：654.75 Kbytes Page：4 Pages